Author/Authors :
Hنrkِnen، نويسنده , , Samuel J. and Tuovinen، نويسنده , , E. and Luukka، نويسنده , , P. and Tuominen، نويسنده , , E. and Li، نويسنده , , I. M. Kotelyanskii and Z. G. Ivanov ، نويسنده , , Andrey A. and Verbitskaya، نويسنده , , E. V. Eremin، نويسنده , , V. and Pirojenko، نويسنده , , A. and Riihimaki، نويسنده , , I. and Virtanen، نويسنده , , A.، نويسنده ,
Abstract :
We have processed pin-diodes and strip detectors on n- and p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900 Ω cm and 1.9 kΩ cm for n- and p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit fabrication. This is optimal for semiconductor fabrication as well as for radiation hardness. The radiation hardness of devices has been investigated with several irradiation campaigns including low- and high-energy protons, neutrons, γ-rays, lithium ions and electrons. Cz-Si was found to be more radiation hard than standard Float Zone silicon (Fz-Si) or oxygenated Fz-Si. When irradiated with protons, the full depletion voltage in Cz-Si has not exceeded its initial value of 300 V even after the fluence of 5×1014 cm−2 1-MeV eq. n cm−2 that equals more than 30 years operation of strip detectors in LHC experiments.
