Title of article
Radiation damage studies for the BaBar Silicon Vertex Tracker
Author/Authors
Re، نويسنده , , V. and Kirkby، نويسنده , , D. and Bruinsma، نويسنده , , M. and Berryhill، نويسنده , , J. and Burke، نويسنده , , S. and Callahan، نويسنده , , D. and Campagnari، نويسنده , , C. and Dahmes، نويسنده , , B. Shukitt-Hale، نويسنده , , D. and Hart، نويسنده , , P. and Kyre، نويسنده , , S. and Levy، نويسنده , , S. and Long، نويسنده , , O. and Mazur، نويسنده , , M. B. Richman، نويسنده , , Rosemary J. and Stoner، نويسنده , , J. and Verkerke، نويسنده , , W. and Be، نويسنده ,
Pages
5
From page
11
To page
15
Abstract
The Silicon Vertex Tracker of the BaBar experiment is a five-layer, double-sided AC-coupled silicon microstrip detector operating on the PEP-II storage ring at the Stanford Linear Accelerator Center. After more than four years of running, the silicon sensors and the front-end electronics in the inner layer have absorbed radiation doses up to 2 Mrad. In this paper we present results from radiation hardness tests and discuss the implications of the absorbed radiation dose on the Silicon Vertex Tracker lifetime.
Keywords
radiation , detector , vertex
Journal title
Astroparticle Physics
Record number
2026533
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