Title of article :
3D silicon detectors—status and applications
Author/Authors :
DaVia، نويسنده , , C. and Hasi، نويسنده , , J. and Kenney، نويسنده , , C. and Kok، نويسنده , , A. and Parker، نويسنده , , S.، نويسنده ,
Pages :
4
From page :
122
To page :
125
Abstract :
3D silicon technology is a new way to make silicon detectors using Micro-Electro-Mechanical-Systems (MEMS) processing. In this innovative design the electrodes penetrate through the silicon bulk perpendicular to the surface. Two types of device have been developed—3D and planar 3D. Both use an edge electrode that eliminates the need for guard rings and provides sensitivity to within a few microns of the edge. 3D technology and its advantages are reviewed and examples of the two types of device are shown.
Keywords :
Active edge , Planar 3D , 3D detector
Journal title :
Astroparticle Physics
Record number :
2026561
Link To Document :
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