Author/Authors :
Despeisse، نويسنده , , M. and Jarron، نويسنده , , P. Lund-Johansen، نويسنده , , K.M. and Moraes، نويسنده , , D. and Shah، نويسنده , , A. and Wyrsch، نويسنده , , N.، نويسنده ,
Abstract :
Preliminary radiation tests of hydrogenated amorphous silicon n–i–p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill.
