Author/Authors :
Kordyasz، نويسنده , , A.J. and Strzelecka، نويسنده , , S.G. and Kownacki، نويسنده , , J. and Dobrza?ski، نويسنده , , L. and Hruban، نويسنده , , A. and Orlowski، نويسنده , , W. and Wegner، نويسنده , , E. and Reissig، نويسنده , , L.، نويسنده ,
Abstract :
The 100 μ m thick, transmission, fully depleted GaAs Schottky barrier detector fabricated from LEC bulk GaAs crystals has been tested. The basic structure of the detector consists of a Cr/Au Schottky contact and an Au/Ge/Ni/Au alloyed ohmic contact. Pulse height spectra for α -particles resulting from irradiation with triple source 239 Pu , 241 Am , 244 Cm , with energies 5.155, 5.486, 5.805 MeV were acquired. The energy resolution for these energies was better than 10 keV (1.8%). Using 241 Am 5.486 MeV α -particles a charge collection efficiency (CCE) of about 94% was obtained at 570 V bias potential. The spectra of low-energy γ -rays 59.5 keV and X-rays with average energy 16.2 keV from 241 Am source measured at room temperature are presented. An energy resolution of about 6.1 keV (10.3%) FWHM at 59.5 keV was obtained.
