Characterization of carrier recombination and trapping processes in proton irradiated silicon by microwave absorption transients

Carrier lifetime variations dependent on proton irradiation with fluences in the range from 5×1012 to 1015 cm−2 were investigated in high resistivity oxygenated silicon wafers and pad detectors. The fast recombination and slow trapping constituents within recombination transients have been distinguished by combining analyses of the excess carrier decay dependence on the excitation intensity, bias illumination and temperature, measured using the technique of microwave absorption by free carriers. Differences in the rate of formation and type of defects in the ranges of moderate and highest proton irradiation fluences have been revealed from the inverse lifetime dependence on irradiation fluence. The activation factors of the capture centres have been evaluated from carrier lifetime variations in the range of low and elevated temperatures.