Author/Authors :
Dittongo، نويسنده , , S. and Bosisio، نويسنده , , L. and Contarato، نويسنده , , D. and DʹAuria، نويسنده , , G. and Fretwurst، نويسنده , , E. and H?rk?nen، نويسنده , , J. and Lindstrom، نويسنده , , G. and Tuovinen، نويسنده , , E.، نويسنده ,
Abstract :
Silicon test structures manufactured on different substrate materials (standard and oxygenated float-zone, magnetic and non-magnetic Czochralski, epitaxial silicon) have been irradiated with 900 MeV electrons up to a fluence of 6.1 × 10 15 e / cm 2 . Results are reported on the variation of the effective dopant concentration and of the leakage current density as a function of the electron fluence. The time evolution of the effective dopant concentration is also reported after thermal annealing cycles at 80 ∘ C .
