Author/Authors :
Kramberger، نويسنده , , G. and Batic، نويسنده , , M. and Cindro، نويسنده , , V. and Mandi?، نويسنده , , I. and Mikuz، نويسنده , , M. and Zavrtanik، نويسنده , , M.، نويسنده ,
Abstract :
Annealing of effective trapping times of electrons and holes in neutron irradiated silicon detectors was measured at different temperatures 40, 60, 80 ° C . The evolution of effective trapping times seems to be governed by the first-order process. The effective trapping probability of holes was found to increase by 40% and of electrons to decrease by 20% during annealing. The time constants are of order 600 min at 60 ° C . The scaling to different temperatures can be obtained from Arrhenius relation with activation energies of around 1 eV.
