Title of article :
Characterization of 3D-stc detectors fabricated at ITC-irst
Author/Authors :
Boscardin، نويسنده , , Maurizio and Bosisio، نويسنده , , Luciano and Bruzzi، نويسنده , , Mara and Dalla Betta، نويسنده , , Gianfranco and Piemonte، نويسنده , , Claudio and Pozza، نويسنده , , Alberto and Ronchin، نويسنده , , Sabina and Tosi، نويسنده , , Carlo and Zorzi، نويسنده , , Nicola، نويسنده ,
Pages :
3
From page :
284
To page :
286
Abstract :
3D silicon radiation detectors offer many advantages over planar detectors, including improved radiation tolerance and faster charge collection time. We proposed a new 3D architecture (referred to as 3D-stc), which features columnar electrodes of one doping type only, thus, allowing a considerable simplification of the manufacturing process. In this paper, we report selected results from the electrical characterization of 3D diodes fabricated with this technology, along with preliminary results on the charge collection efficiency of these devices.
Keywords :
Electrical characterization , Charge collection efficiency , DRIE , 3D detectors , Fabrication technology
Journal title :
Astroparticle Physics
Record number :
2027676
Link To Document :
بازگشت