Author/Authors :
Ronchin، نويسنده , , Sabina and Boscardin، نويسنده , , Maurizio and Piemonte، نويسنده , , Claudio and Pozza، نويسنده , , Alberto and Zorzi، نويسنده , , Nicola and Dalla Betta، نويسنده , , Gian-Franco and Bosisio، نويسنده , , Luciano and Pellegrini، نويسنده , , Giulio، نويسنده ,
Abstract :
Recently, we presented a new 3D detector architecture aimed at simplifying the manufacturing process, making it more suitable for high-volume production. In particular, the proposed device features electrodes of one doping type only, e.g., n+ columns in a p-type substrate. In this paper we report on the fabrication at ITC-irst of the first batch of prototypes. The main issues related to the fabrication process along with preliminary results from the electrical characterization of different detectors and test structures are discussed.
Keywords :
3D detectors , Electrical characterization , Fabrication technology , Silicon detectors , DRIE etching
