Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

Detectors with n-type silicon with an n+-type guard ring were investigated. In the present work, a new p+/n/n+ detector structure with an n+ guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software.