Title of article :
Bismuth X-ray absorber studies for TES microcalorimeters
Author/Authors :
Sadleir، نويسنده , , J.E. and Bandler، نويسنده , , S.R. and Brekosky، نويسنده , , R.P. and Chervenak، نويسنده , , J. and Figueroa-Feliciano، نويسنده , , E. and Finkbeiner، نويسنده , , F. and Iyomoto، نويسنده , , N. and Kelley، نويسنده , , R.L. and Kilbourne، نويسنده , , C.A. and King، نويسنده , , J.M and Porter، نويسنده , , F.S. and Robinson، نويسنده , , I.K. and Saab، نويسنده , , T. and Talley، نويسنده , , D.J.، نويسنده ,
Pages :
3
From page :
447
To page :
449
Abstract :
Bismuthʹs large atomic number and low carrier density makes it an attractive X-ray absorber material for microcalorimeters. Bismuthʹs long fermi wavelength and long mean free paths have motivated much interest in the fabrication of high quality bismuth films to study quantum size effects. Despite such incentives, fabrication of high quality bismuth films has proven difficult, and measured properties of such films are highly variable in the literature. Implementing a bismuth deposition process for TES (superconducting Transition Edge Sensor) device fabrication presents additional challenges particularly at interfaces due to the inherent granularity and surface roughness of its films, its low melting point, and its tendency to diffuse and form undesired intermetallic phases. We report observations of Bi–Cu and Bi–Au diffusion in our devices correlating with large shifts in T c (superconducting transition temperature). Using SEM and in situ R vs T annealing experiments we have been able to study these diffusion processes and identify their activation temperatures.
Keywords :
diffusion , In situ resistance annealing , Multilayer strip resistance , X-ray absorber , Superconducting transition edge sensor (TES) , Microcalorimetry
Journal title :
Astroparticle Physics
Record number :
2028230
Link To Document :
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