Title of article
First detection of gamma-ray peaks by an undoped InSb Schottky detector
Author/Authors
Hishiki، نويسنده , , Shigeomi and Kogetsu، نويسنده , , Yoshitaka and Kanno، نويسنده , , Ikuo and Nakamura، نويسنده , , Tatsuya and Katagiri، نويسنده , , Masaki، نويسنده ,
Pages
3
From page
558
To page
560
Abstract
The compound semiconductor InSb, because of its very small band-gap energy, high density and high atomic number, is suitable for the substrate of X-ray detectors with high-energy resolution and high efficiency. An InSb Schottky detector is fabricated with an undoped InSb wafer and is used in the measurement of 133Ba gamma-rays. Here, the first observation of an escape peak of 81 keV gamma-rays emitted by 133Ba using an InSb detector is reported. The event ratios of the escape and 81 keV gamma-rays were estimated by a Monte Carlo simulation code as a function of depletion layer thickness and were compared with experimental result.
Keywords
InSb , Compound Semiconductor , Gamma-ray detector
Journal title
Astroparticle Physics
Record number
2028306
Link To Document