Title of article
X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors
Author/Authors
Ohkubo، نويسنده , , M. and Fons، نويسنده , , P. and Kushino، نويسنده , , A. and Chen، نويسنده , , Y.E. and Ukibe، نويسنده , , M. and Kitajima، نويسنده , , Y.، نويسنده ,
Pages
3
From page
731
To page
733
Abstract
Fluorescent-yield X-ray absorption spectroscopy (XAS) taken with a superconducting tunnel junction (STJ) detector has been employed to study the oxygen K-edge structure of Hf–Al oxide gate insulators for next-generation metal-oxide-semiconductor (MOS) devices. Thermal stability is a critical issue in the MOS fabrication processes. We show that O K-edge XAS indicates that no change in the electronic band structure occurs due to thermal annealing.
Keywords
field effect transistor , Superconducting tunnel junction , X-ray absorption spectroscopy , High-K oxide
Journal title
Astroparticle Physics
Record number
2028383
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