Author/Authors :
Hoffmann، نويسنده , , P. and Baake، نويسنده , , O. and Beckhoff، نويسنده , , B. and Ensinger، نويسنده , , W. and Fainer، نويسنده , , N. and Klein، نويسنده , , A. and Kosinova، نويسنده , , M. and Pollakowski، نويسنده , , B. and Trunova، نويسنده , , V. and Ulm، نويسنده , , G. and Weser، نويسنده , , J.، نويسنده ,
Abstract :
First results are presented for the identification of chemical bonds and structures (speciation) in boron and silicon carbonitrides, produced as layers of some hundred nm. The boron carbonitride (BCxNy) films are synthesized by low-pressure chemical vapor deposition (LPCVD) using the precursor substance trimethylamine borane. The samples of silicon carbonitride (SiCxNy) films are synthesized by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyl disilazane. The measurements were performed by total reflection X-ray fluorescence analysis combined with near-edge X-ray absorption fine structure investigations (TXRF-NEXAFS) and by X-ray photo-electron spectroscopy (XPS). The results are compared with those obtained for standard samples boron carbide (B4C), boron nitride (e.g., h-BN, c-BN), silicon carbide (SiC), and silicon nitride (Si3N4).
Keywords :
Silicon carbonitrides , Chemical bonding , Boron carbonitrides , X-ray fluorescence analysis
