Author/Authors :
Dorokhov، نويسنده , , A. and Allkofer، نويسنده , , Y. and Amsler، نويسنده , , C. and Bortoletto، نويسنده , , D. and Chiochia، نويسنده , , V. and Cremaldi، نويسنده , , L. and Cucciarelli، نويسنده , , S. and Hِrmann، نويسنده , , C. and Kim، نويسنده , , D. and Konecki، نويسنده , , M. and Kotlinski، نويسنده , , D. and Prokofiev، نويسنده , , K. and Regenfus، نويسنده , , C. and Rohe، نويسنده , , T. and Sanders، نويسنده , , D. and Son، نويسنده , , S.، نويسنده ,
Abstract :
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 10 15 n eq / cm 2 sensors.
Keywords :
pixel , CMS , Radiation hardness , Electric field , Lorentz angle , Charge collection , Silicon
