Author/Authors :
Jarron، نويسنده , , P. and Moraes، نويسنده , , D. and Despeisse، نويسنده , , M. and Dissertori، نويسنده , , G. and Dunand، نويسنده , , S. and Kaplon، نويسنده , , J. and Miazza، نويسنده , , C. and Shah، نويسنده , , A. and Viertel، نويسنده , , G.M. and Wyrsch، نويسنده , , N.، نويسنده ,
Abstract :
Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS) devices. We present results obtained with a-Si:H sensor films deposited on a glass substrate and on ASIC, including the radiation hardness of this material up to a fluence of 3.5×1015 p/cm2.
Keywords :
Pixel detector , Hydrogenated amorphous silicon , TFA , Radiation hardness
