Title of article
Edgeless silicon pad detectors
Author/Authors
Perea Solano، نويسنده , , B. and Abreu، نويسنده , , M.C. and Avati، نويسنده , , V. and Boccali، نويسنده , , T. and Boccone، نويسنده , , V. and Bozzo، نويسنده , , M. and Capra، نويسنده , , R. and Casagrande، نويسنده , , L. and Chen، نويسنده , , W. and Eggert، نويسنده , , K. and Heijne، نويسنده , , E. and Klauke، نويسنده , , S. and Li، نويسنده , , Z. and Mنki، نويسنده , , T. and Mirabito، نويسنده , , L. and Morelli، نويسنده , , A. and Niinikoski، نويسنده ,
Pages
4
From page
135
To page
138
Abstract
We report measurements in a high-energy pion beam of the sensitivity of the edge region in “edgeless” planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5±8stat..±6syst.) μm.
Keywords
Silicon diode detector , Edgeless detector , cryogenic , Edge sensitivity , High-energy test beam
Journal title
Astroparticle Physics
Record number
2028497
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