Author/Authors :
Dubeck?، نويسنده , , Franti?ek and Boh??ek، نويسنده , , Pavol and Sek??ov?، نويسنده , , M?ria and Za?ko، نويسنده , , Bohum?r and Lalinsk?، نويسنده , , Tibor and Linhart، نويسنده , , Vladim?r and ?ag?tov?-Perd’ochov?، نويسنده , , Andrea and Mudro?، نويسنده , , Jan and Pospisil، نويسنده , , Stanislav، نويسنده ,
Abstract :
In the present work, a comparative study of semi-insulating (SI) GaAs radiation detectors with different blocking (Schottky) and ohmic contact metallization is presented. The detectors fabricated from “detector-grade” bulk SI GaAs are characterized by current–voltage measurements and their detection performance is evaluated from pulse-height spectra of 241Am and 57Co γ-sources. Observed results are evaluated and discussed. Importance of the optimized electrodes technology of SI GaAs detector with good performance is demonstrated.
Keywords :
GaAs radiation detector , semi-insulating , Electrode metallization , digital imaging , X-rays
