Title of article :
Fast neutron irradiation of Monolithic Active Pixel Sensors dedicated to particle detection
Author/Authors :
Fourches، نويسنده , , N.T. and Besançon، نويسنده , , M. and Li، نويسنده , , Y. and Lutz، نويسنده , , P. and Orsini، نويسنده , , F.، نويسنده ,
Abstract :
Neutron-induced effects have been studied in Monolithic Active Pixel Sensors (MAPS) designed at CEA/Saclay and IPHC/Strasbourg. 55Fe X-rays were used to assess the detection capabilities. The pedestals and the temporal noise were studied together with the charge collection efficiency. The results are compared to estimations of the deep trap introduction rates. For neutron-integrated fluxes up to 1012 cm−2, these MAPS are weakly degraded by irradiation.
Keywords :
Defects , neutrons , Monolithic active pixel sensors , Noise , Silicon , Carrier transport , Irradiation , Charge collection efficiency
Journal title :
Astroparticle Physics
