Title of article
InAs pixel matrix detectors fabricated by diffusion of Zn in a metal-organic vapour-phase epitaxy reactor
Author/Authors
Sنynنtjoki، نويسنده , , A. and Kostamo، نويسنده , , P. and Sormunen، نويسنده , , J. and Riikonen، نويسنده , , J. and Lankinen، نويسنده , , A. and Lipsanen، نويسنده , , H. and Andersson، نويسنده , , H. and Banzuzi، نويسنده , , K. and Nenonen، نويسنده , , S. and Sipilن، نويسنده , , H. and Vaijنrvi، نويسنده , , Anthony S. and Lumb، نويسنده , , D.، نويسنده ,
Pages
3
From page
24
To page
26
Abstract
We introduce a zinc diffusion process to fabricate an InAs-based detector matrix using an atmospheric pressure metal-organic vapour-phase epitaxy reactor. Current–voltage characteristics are measured and different diffusion parameters are experimented. Spectral alpha radiation response of the diode is reported. To our knowledge, this is the first time that InAs was used as an alpha particle detector.
Keywords
Indium arsenide , Imaging detectors , MOVPE
Journal title
Astroparticle Physics
Record number
2029013
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