Title of article
Performance of irradiated -on- silicon microstrip sensors
Author/Authors
Hara، نويسنده , , K. and Mochizuki، نويسنده , , A. and Munakata، نويسنده , , T. UEDA-NAKAMURA، نويسنده , , Y. and Nakamura، نويسنده , , K. and Inoue، نويسنده , , K. and Ikegami، نويسنده , , Y. and Kohriki، نويسنده , , T. and Terada، نويسنده , , S. and Unno، نويسنده , , Y.، نويسنده ,
Pages
5
From page
538
To page
542
Abstract
The silicon microstrip detector type with n + readout fabricated on p bulk, n + -on- p , is a candidate to be operational in radiation environments much severer than in LHC. We characterized n + -on- p detectors which were irradiated up to 1.1 × 10 14 protons / cm 2 10 years ago. The noise level and charge collection were evaluated using the ATLAS SCT readout electronics system. Radiation-induced increase in the noise and loss in the charge collection are not significant. The charge collection is not degraded in any particular point in the inter-strip region when the detector is operated under partial depletion.
Keywords
Silicon microstrip detector , Charge collection , p bulk , Irradiation
Journal title
Astroparticle Physics
Record number
2029386
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