Author/Authors :
Dmitriev، نويسنده , , Yuri and Bennett، نويسنده , , Paul R. and Cirignano، نويسنده , , Leonard J. and Gupta، نويسنده , , Tapan K. and Higgins، نويسنده , , William M. and Shah، نويسنده , , Kanai S. and Wong، نويسنده , , Philip، نويسنده ,
Abstract :
TlBr doped with In and Pb was synthesized and grown using a vertical Bridgman method. The segregation coefficients of both dopants in TlBr were calculated using the different experimental optical and electrical characteristics of (TlBr)0.973–(InBr)0.027 and (TlBr)0.972–(PbBr2)0.078 crystals. The solubility of In and Pb in the liquid phase is higher than their solubility in solid TlBr: ks(In)=1.06 and ks(Pb)=1.3–1.6. Doping with both impurities leads to degradation of the electrical, optical, and detector properties of TlBr.
Keywords :
Doping , Segregation coefficient , Thallium bromide , X-Ray , electric conductivity
