Study of the current–voltage characteristics of a SiC radiation detector irradiated by Co-60 gamma-rays

The SiC semiconductor has recently emerged as an attractive material for an ionization radiation detection. A wide bandgap (3.03 eV) and high radiation damage resistance allow for the fabrication of detectors capable of operating at a high-temperature and in high radiation fields. The major aim of our study is to develop a robust detector which will be applied to harsh radiation environments. In this study, we fabricated the SiC radiation detectors and measured the current–voltage characteristics of SiC detectors irradiated by Co-60 gamma-ray source. The I–V curves showed a decrease of the leakage current with increasing dose rate of Co-60 gamma-ray in the 0–100 V bias voltage range.