Author/Authors :
Siegmund، نويسنده , , O. and Vallerga، نويسنده , , J. and McPhate، نويسنده , , Philip J. and Malloy، نويسنده , , J. and Tremsin، نويسنده , , A. and Martin، نويسنده , , A. and Ulmer، نويسنده , , M. and Wessels، نويسنده , , B.، نويسنده ,
Abstract :
We have made substantial progress in the development of GaN photocathodes, including crystalline and polycrystalline GaN and InGaN coatings grown by chemical vapor deposition or molecular beam epitaxy on sapphire substrates. GaN and InGaN photocathodes have been developed with efficiencies up to 70% and cutoffs at ∼380 nm with low out of band response, and high stability and longevity. Samples have been processed and tested at ultra high vacuum to establish cathode process parameters, and some have been integrated into sealed tubes for long-term evaluation.
