Title of article
The quantum efficiency of photo-charge generation in a-Se avalanche photodetectors
Author/Authors
Reznik، نويسنده , , A. and Lui، نويسنده , , B.J.M. and Ohkawa، نويسنده , , Y. and Matsubara، نويسنده , , T. and Miyakawa، نويسنده , , K. and Kubota، نويسنده , , M. and Tanioka، نويسنده , , K. and Kawai، نويسنده , , T. and Zhao، نويسنده , , W. and Rowlands، نويسنده , , J.A.، نويسنده ,
Pages
3
From page
93
To page
95
Abstract
The quantum efficiency of photo-charge generation and avalanche multiplication in amorphous selenium (a-Se) photodetectors were measured over considerable ranges of photoexcitation wavelengths (420–600 nm) and electric fields (10–112.5 V/μm) for several different a-Se target thicknesses (8–35 μm). An avalanche multiplication factor of 1000 is shown for a 35 μm thick a-Se layer at an electric field of 98 V/μm. The experimental results on quantum efficiency can be explained by the Onsager theory of electron–hole pair dissociation in conjunction with an electric field-induced delocalization of states.
Keywords
Delocalization of states , Onsager dissociation , Avalanche a-Se
Journal title
Astroparticle Physics
Record number
2029691
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