Title of article
Monolithic integration of detectors and transistors on high-resistivity silicon
Author/Authors
Dalla Betta، نويسنده , , Gian-Franco and Batignani، نويسنده , , Giovanni and Boscardin، نويسنده , , Maurizio and Bosisio، نويسنده , , Luciano and Gregori، نويسنده , , Paolo and Pancheri، نويسنده , , Lucio and Piemonte، نويسنده , , Claudio and Ratti، نويسنده , , Lodovico and Verzellesi، نويسنده , , Giovanni and Zorzi، نويسنده , , Nicola، نويسنده ,
Pages
6
From page
658
To page
663
Abstract
We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed.
Keywords
Silicon radiation detectors , Electrical characterization , Fabrication technology , field effect transistors , Bipolar junction transistors
Journal title
Astroparticle Physics
Record number
2029720
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