Author/Authors :
Stani?، نويسنده , , S. and Aihara، نويسنده , , H. and Barbero، نويسنده , , M. and Bozek، نويسنده , , A. and Browder، نويسنده , , T. and Chang، نويسنده , , P. and Hazumi، نويسنده , , M. and Kennedy، نويسنده , , J. and Martin، نويسنده , , E. and Olsen، نويسنده , , S. and Margan، نويسنده , , Werner E. G. Mueller، نويسنده , , J. and Palka، نويسنده , , H. and Rosén، نويسنده , , M. and Ruckman، نويسنده , , L. and Trabelsi، نويسنده , , K. and Tsuboyama، نويسنده , , T. and Uchida، نويسنده , , K. and Varner، نويسنده , , G. and Yarema، نويسنده , , R.، نويسنده ,
Abstract :
Monolithic Active Pixel Sensors (MAPS) may become the building blocks of vertex detectors at future high luminosity e + e - colliders. Requiring an active layer only a few tens of microns thick, MAPS can be thinned to ∼ 50 μ m , which reduces the multiple scattering of primary particles. Deep sub-micron CMOS processes allow for small pixel size, needed for adequate single point resolution and low occupancy at a Super B factory. Major concerns with MAPS are readout speed and signal stability for large pixel arrays. Laser bench test results of a full size prototype (CAP3) with 118,784 readout pixels and a 5-deep correlated double sampling pipeline are presented. Lessons learned are applied to a design iteration and investigation of two new digital readout sensor designs, all included in the CAP4 prototype chip.
Keywords :
Monolithic active pixel sensor , CMOS , Vertex detector , B factory , Radiation hard
