Author/Authors :
Dalla Betta، نويسنده , , Gianfranco and Piemonte، نويسنده , , Claudio and Boscardin، نويسنده , , Maurizio and Gregori، نويسنده , , Paolo de Zorzi، نويسنده , , Nicola and Fazzi، نويسنده , , Alberto and Pignatel، نويسنده , , Giorgio U.، نويسنده ,
Abstract :
We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed.
Keywords :
Fabrication technology , Junction field effect transistors , PIN photodetectors , Silicon radiation detectors , Electrical characterization
