Author/Authors :
Tosi، نويسنده , , C. and Bruzzi، نويسنده , , M. and Macchiolo، نويسنده , , A. and Scaringella، نويسنده , , M. G. Petterson، نويسنده , , M.K. and Sadrozinski، نويسنده , , H.F.-W. and Betancourt، نويسنده , , C. and Manna، نويسنده , , N. and Creanza، نويسنده , , D. and Boscardin، نويسنده , , M. and Piemonte، نويسنده , , C. and Zorzi، نويسنده , , N. and Borrello، نويسنده , , L. and Messineo، نويسنده , , A.، نويسنده ,
Abstract :
The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of 1 × 10 15 cm - 2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements.
Keywords :
Radiation damage , Silicon particle detectors , Defect engineering , SuperLHC , Semiconductor detectors
