Author/Authors :
Piemonte، نويسنده , , Claudio and Dalla Betta، نويسنده , , Gian-Franco and Boscardin، نويسنده , , Maurizio and Gregori، نويسنده , , Paolo de Zorzi، نويسنده , , Nicola and Ratti، نويسنده , , Lodovico، نويسنده ,
Abstract :
We report on JFET devices fabricated on high-resistivity silicon with a radiation detector technology. The problems affecting previous versions of these devices have been thoroughly investigated and solved by developing an improved fabrication process, which allows for a sizeable enhancement in the JFET performance. In this paper, the main features of the fabrication technology are presented and selected results from the electrical and noise characterization of transistors are discussed.
Keywords :
Fabrication technology , Charge-sensitive amplifiers , Junction field effect transistors , Radiation detectors
