Author/Authors :
Musienko، نويسنده , , Y. and Renker، نويسنده , , D. and Reucroft، نويسنده , , S. and Scheuermann، نويسنده , , R. and Stoykov، نويسنده , , A. and Swain، نويسنده , , J.، نويسنده ,
Abstract :
Results on the radiation hardness of multipixel Geiger-mode avalanche photodiodes (G-APDs) are presented. Recently developed G-APDs from three manufacturers (Hamamatsu (Japan), CPTA(Russia) and Mikron/Dubna(Russia)) were exposed to 28 MeV positrons with fluences up to 8 × 10 10 positrons / cm 2 at the Paul Scherrer Institute. The effects of this radiation on many G-APD parameters such as gain, photon detection efficiency, dark current and count rate for these devices are shown and discussed.
