Title of article
Study of radiation damage induced by 24 GeV/c and 26 MeV protons on heavily irradiated MCz and FZ silicon detectors
Author/Authors
Radicci، نويسنده , , V. and Borrello، نويسنده , , L. and Boscardin، نويسنده , , M. and Bruzzi، نويسنده , , M. and Creanza، نويسنده , , D. and Dalla Betta، نويسنده , , G.F. and de Palma، نويسنده , , Federico M. and Focardi، نويسنده , , E. and Macchiolo، نويسنده , , A. La Manna and S. Longhi، نويسنده , , N. and Menichelli، نويسنده , , D. and Messineo، نويسنده , , A. and Piemonte، نويسنده , , C. and Pozza، نويسنده , , A. and Scaringella، نويسنده , , M. and Segneri، نويسنده , , G. and Sentenac، نويسنده , , D. and Zorzi، نويسنده , , N.، نويسنده ,
Pages
6
From page
330
To page
335
Abstract
The aim of this work is the development of radiation hard detectors for very high luminosity colliders. A growing interest has been recently focused on Czochralski silicon as a potentially radiation-hard material. We report on the processing and characterization of micro-strip sensors and pad detectors produced by ITC-IRST on n- and p-type magnetic Czochralski and float zone silicon. Part of the samples has been irradiated using 24 GeV/c protons (CERN-Geneva), while another part has been irradiated with 26 MeV protons (FZK-Karlsruhe) up to a fluence of 5×1015 1 MeV-neutron-equivalent/cm2. All the samples have been completely characterized before and after irradiation. Their radiation hardness as a function of the irradiation fluence has been established in terms of breakdown voltage, leakage current and evaluating the more relevant mini-sensor parameter variation. Moreover, the time evolution of depletion voltage, leakage current and inter-strip capacitance has been monitored in order to study their annealing behavior and space charge sign inversion effects.
Keywords
Silicon detectors , Radiation damage , Micro-strip detectors
Journal title
Astroparticle Physics
Record number
2031041
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