Author/Authors :
Tsuboyama، نويسنده , , Toru and Arai، نويسنده , , Yasuo and Fukuda، نويسنده , , Koichi and Hara، نويسنده , , Kazuhiko and Hayashi، نويسنده , , Hirokazu and Hazumi، نويسنده , , Masashi and Ida، نويسنده , , Jiro and Ikeda، نويسنده , , Hirokazu and Ikegami، نويسنده , , Yoichi and Ishino، نويسنده , , Hirokazu and Kawasaki، نويسنده , , Takeo and Kohriki، نويسنده , , Takashi and Komatsubara، نويسنده , , Hirotaka a، نويسنده ,
Abstract :
Development of a monolithic pixel detector based on SOI (silicon on insulator) technology was started at KEK in 2005. The substrate of the SOI wafer is used as a radiation sensor. At end of 2005, we submitted several test-structure group (TEG) chips for the 150 nm, fully depleted CMOS process. The TEG designs and preliminary results are presented.
