Author/Authors :
Manna، نويسنده , , N. and Bassignana، نويسنده , , D. and Boscardin، نويسنده , , M. and Borrello، نويسنده , , L. and Bruzzi، نويسنده , , M. and Creanza، نويسنده , , D. and de Palma، نويسنده , , M. V. Eremin and O. V. Lavizina ، نويسنده , , V. and Macchiolo، نويسنده , , A. and Menichelli، نويسنده , , D. and Messineo، نويسنده , , A. and Radicci، نويسنده , , V. and Scaringella، نويسنده , , M. and Verbiskaya، نويسنده , , E.، نويسنده ,
Abstract :
Magnetic Czochralski (MCz) silicon is currently being considered as a promising material for the development of radiation tolerant detectors for future high luminosity HEP experiments. Silicon wafers grown by the MCz method have been processed by ITC-IRST (Trento, Italy) with a layout designed by the SMART collaboration. The diodes produced with n-type MCz material have undergone various irradiation campaigns, using 24 GeV/c (SPS-CERN) protons, 26 MeV (FZK-Karlsruhe) protons and reactor neutrons (JSI-Ljubljana), with fluences up to 10 16 1 MeV equivalent neutrons ( n eq ) cm - 2 . This paper investigates space charge sign inversion effects after these irradiation levels. Samples have been characterized by reverse current and capacitance measurements before and after irradiation, and by Transient Current Technique (TCT) after irradiation. Results of the study of depletion voltage as a function of fluence and of TCT signal shapes show that Space Charge Sign Inversion has already occurred in the devices at a fluence of 4.2 × 10 14 n eq cm - 2 after 26 MeV proton irradiation, and at 5 × 10 14 n eq cm - 2 after neutron irradiation.
