Author/Authors :
Deveaux، نويسنده , , M. and Amar، نويسنده , , S. and Besson، نويسنده , , A. and Baudot، نويسنده , , J. J. Claus، نويسنده , , G. and Colledani، نويسنده , , C. and Deptuch، نويسنده , , G. and Dorokhov، نويسنده , , A. and Dulinski، نويسنده , , W. and Goffe، نويسنده , , M. and Gornushkin، نويسنده , , Y. and GrandJean، نويسنده , , D. and Heini، نويسنده , , S. and Himmi، نويسنده , , A. and Hu، نويسنده , , C. and Jaaskelainen، نويسنده , , K. and Mün، نويسنده ,
Abstract :
Monolithic Active Pixel Sensors (MAPS) have been proposed as sensing devices for the vertex detectors at the International Linear Collider (ILC), of the STAR upgrade and of the Compressed Baryonic Matter (CBM) experiment. These applications require substantial tolerance to non-ionising doses, which range up to ∼ 10 13 n eq / cm 2 .
e studies were undertaken in order to measure the, so far widely unknown, radiation hardness of MAPS optimised for charged particle tracking and to identify the dominating effects of non-ionising radiation on these devices. This paper focuses on the recombination of signal electrons in the sensitive volume, which is the dominating problem provoked by bulk damage in MAPS. The dependence of this effect on some aspects of the pixel architecture is discussed, aiming to optimise the latter with respect to radiation tolerance.
Keywords :
Radiation hardness , CMOS , Monolithic active pixel sensors , maps
