Author/Authors :
Boh??ek، نويسنده , , Pavol and Zat’ko، نويسنده , , Bohum?r and Dubeck?، نويسنده , , Franti?ek and Chrom?k، نويسنده , , ?tefan and Huran، نويسنده , , Jozef and Sek??ov?، نويسنده , , M?ria، نويسنده ,
Abstract :
In this work, we concentrate on the study of the role of ohmic electrode metallization of radiation imaging detectors based on bulk semi-insulating (SI) GaAs. We fabricated SI GaAs radiation detectors with Ti/Pt/Au Schottky contact on one side and In/Au, Mg/Au and Gd/Au contacts on the other side of bulk material with the aim to form hole barrier Schottky contact with non-injecting effect. Current–voltage and noise characteristics and also detection performance of detectors are measured and evaluated. Observed results are discussed and compared with detector using standard AuGeNi non-alloyed ohmic metallization.
Keywords :
Ohmic metallization , semi-insulating , GaAS , radiation detector
