Author/Authors :
Kostamo، نويسنده , , Pasi and Nenonen، نويسنده , , Seppo and Vنhنnen، نويسنده , , Sami and Tlustos، نويسنده , , Lukas and Frِjdh، نويسنده , , Christer and Campbell، نويسنده , , Michael and Zhilyaev، نويسنده , , Yuri and Lipsanen، نويسنده , , Harri، نويسنده ,
Abstract :
A GaAs Medipix2 hybrid pixel detector based on high purity epitaxial GaAs material was successfully fabricated. The mesa type GaAs sensor with 256×256 pixels and total area of 1.4×1.4 cm2 was made of a 140-μm-thick epitaxial p–i–n structure utilizing reactive ion etching. A final thickness of approximately 110 μm for the all-epitaxial sensor element is achieved by back-thinning procedure. The sensor element is bump bonded to a Medipix2 read-out ASIC. The detector is capable of room temperature spectroscopic operation and it demonstrates the potential of GaAs for high resolution X-ray imaging systems operating at room temperature. This work describes the manufacturing process and electrical properties of the GaAs Medipix2 hybrid detector.
