Author/Authors :
Won، نويسنده , , Jae Ho and Kim، نويسنده , , Ki Hyun and Suh، نويسنده , , Jong Hee and Cho، نويسنده , , Shin Hang and Cho، نويسنده , , Pyong Kon and Hong، نويسنده , , Jin-Ki and Kim، نويسنده , , Sun Ung and Monroe، نويسنده ,
Abstract :
The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm2/R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively.
