Development of thin pixel sensors and a novel interconnection technology for the SLHC

We present an R&D activity aiming to develop a new detector concept in the framework of the ATLAS pixel detector upgrade in view of the Super-LHC. The new devices combine 75–150 μm thick pixels sensors with a vertical integration technology. A new production of thin pixel sensors on n- and p-type material is under way at the MPI Semiconductor Laboratory. These devices will be connected to the ATLAS read-out electronics with the new Solid–Liquid InterDiffusion technique as an alternative to the bump-bonding process. We also plan for the signals to be extracted from the back of the electronics wafer through Inter-Chip-Vias. The compatibility of the Solid–Liquid InterDiffusion process with the silicon sensor functionality has already been demonstrated by measurements on two wafers hosting diodes with an active thickness of 50 μm.