Author/Authors :
Krab??، نويسنده , , Lubom?r and Klementov?، نويسنده , , Mariana and ?ubrt، نويسنده , , Jan and Fajgar، نويسنده , , Radek and Kup??k، نويسنده , , Jaroslav and Bastl، نويسنده , , Zden?k and Stuchl?kov?، نويسنده , , The Ha and D??nek، نويسنده , , Vladislav، نويسنده ,
Abstract :
The silicon oxycarbide Si/O/C nanotubes were prepared by two-step procedure. First, a nanostructure deposit mainly composed of nanocables with germanium core was synthetized by low pressure chemical vapor deposition (LPCVD) using hexamethyldigermane Ge2Me6 and 1,1,3,3-tetramethyldisilazane (Me2SiH)2NH as the volatile precursors. Second, LPCVD was followed by annealing at 850 °C in vacuum to evaporate germanium core. As a result Si/O/C nanotubes were formed. Various techniques such as Raman spectroscopy, TEM, SEM/EDX, XPS and HRTEM were used to study the physical and chemical properties.
Keywords :
CVD , Oxycarbides , Germanium , Nanotubes , nanowires , Nanomaterials
