Title of article
Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts
Author/Authors
Grieb، نويسنده , , Tim and Müller، نويسنده , , Knut and Fritz، نويسنده , , Rafael and Grillo، نويسنده , , Vincenzo and Schowalter، نويسنده , , Marco and Volz، نويسنده , , Kerstin and Rosenauer، نويسنده , , Andreas، نويسنده ,
Pages
9
From page
1
To page
9
Abstract
The high angle annular dark field intensity (HAADF) in scanning transmission electron microscopy (STEM) can be used for a quantitative evaluation of the chemical composition in dilute GaNAs quantum wells by comparison with simulated intensities. As the scattered intensity is highly sensitive to surface strain fields originating from the quantum wells embedded in GaAs, the HAADF intensity is difficult to evaluate in a quantitative way as long as strain contrast cannot be distinguished from chemical contrast. We present a method to achieve full 2D HAADF STEM compositional mapping of GaNAs/GaAs quantum well systems by making use of information from two different camera lengths.
Keywords
Quantitative , STEM , Surface strain , GaNAs , HAADF
Journal title
Astroparticle Physics
Record number
2043946
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