Two-dimensional, electrostatic finite element study of tip–substrate interactions in electric force microscopy of high density interconnect structures

Two-dimensional electrostatic finite element modeling is used to estimate the variation of tip force as a function of potential, dielectric film thickness, and tip–substrate spacing when imaging using electric force microscopy. Blanket dielectric films and ∼1000 nm thick interconnect structures were studied. We conclude that sidewall damage regions can be detected but will require special processing to make an unambiguous measurement.