Author/Authors :
Wei، نويسنده , , Xiaoli and Duan، نويسنده , , Xiaofeng and Wang، نويسنده , , Shengqiang، نويسنده ,
Abstract :
The asymmetrical bending of the stacking fault fringes in the dark-field large angle convergent beam electron diffraction patterns is reported and utilized to determine the sense of the stacking fault. A stacking fault pyramid in GaAs is studied by analysing the enteraction between the stacking fault and the diffraction lines in the LACBED patterns so as to determine the intrinsic/extrinsic stacking faults and the displacement vector R.