Title of article
Electron emission characteristics of C-BN films deposited by electrophoresis
Author/Authors
Lijuan، نويسنده , , Yu and Junfeng، نويسنده , , Li and Ning، نويسنده , , Deng and Zhu، نويسنده , , Chang-Chun، نويسنده ,
Pages
3
From page
155
To page
157
Abstract
In this paper, we introduce the process of fabricating C-BN film on a silicon tip field emitter array by the method of electrophoresis. Micrograph shows that the deposited C-BN film is uniform. The field emission characteristics of the C-BN-coated Si tip array have been studied and the turn-on electric field intensity of coated Si array is 22.5 V/μm, and the maximum current of 7.6 μA can be obtained at an electric field intensity of 38.7 V/μm.
Keywords
electrophoresis , Field emission , C-BN film
Journal title
Astroparticle Physics
Record number
2046996
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