High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p+–n silicon junction

High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p+–n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and high-resolution EBIC image simultaneously obtained. It is shown that the EBIC imaging capabilities of this combined instrument allows the study of p–n junctions with a resolution of about 20 nm.