Title of article :
3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film
Author/Authors :
M. Kodzuka، نويسنده , , M. and Ohkubo، نويسنده , , T. and Hono، نويسنده , , K. and Matsukura، نويسنده , , F. and Ohno، نويسنده , , H.، نويسنده ,
Abstract :
The distribution of Mn in a Ga0.963Mn0.037As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga0.963Mn0.037As are uniformly dissolved without forming any nanometer-sized clusters.
Keywords :
Atom probe , SEM , specimen preparation , Mn)As , DMS , FIB , Diluted magnetic semiconductor , (Ga
Journal title :
Astroparticle Physics
