Author/Authors :
Gilbert، نويسنده , , M. and Vandervorst، نويسنده , , W. and Koelling، نويسنده , , S. and Kambham، نويسنده , , A.K.، نويسنده ,
Abstract :
The atom probe analysis of a full gate stack (metal gate/high-k dielectric) in a 3D finFET is reported. The measurement reliability in this kind of heterogeneous structure is discussed in the light of different artefacts, i.e. mass overlap and 3D reconstruction artefacts.
