Current and potential characterization on InAs nanowires by contact-mode atomic force microscopy and Kelvin probe force microscopy

We fabricated InAs nanowires on GaAs giant step structures, and studied their surfaces by two methods; one was current detection by contact-mode atomic force microscopy, and the other was surface potential measurement by Kelvin probe force microscopy (KFM). In the current detection method, the regions where the large current flowed were distributed along the step edges, and these regions agreed well with the expected distribution of InAs. This result confirms that the InAs nanowires were formed along the GaAs giant step edges. The KFM measurements showed that the potential value became more negative along each step edge, where the InAs nanowire was expected to be formed. The surface potential of the InAs nanowires is more negative than that of the surrounding GaAs, which may result from the electron accumulation in the InAs nanowires.