Defect analysis in high temperature deformed Al single crystals

Isochronal annealing studies of residual electrical resistivity were carried out on Al (111) single crystals which had been deformed in tension at Td = 0.5 Tm and Td = 0.7 Tm (Tm refers to the melting temperature in K). For all different plastic strains applied, two characteristic annealing stages in the resistivity isochrones were observed. While one annealing stage occurs at Td or above and corresponds to the annihilation of deformation induced dislocations, the other is situated at temperatures lower than Ta. From comparative quenching experiments, the annealing of thermal defects can be ruled out. It is suggested that a second species of deformation-induced dislocations anneals here which gets mobile during the unloading of crystals subsequent to their deformation.